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PNZ150L - Silicon NPN Phototransistor

Key Features

  • High sensitivity Wide spectral sensitivity, suited for detecting GaAs LEDs Low dark current Small size, thin side-view type package 4.5±0.3 4.2±0.3 2.3 1.9 42.7±1.0 2.2 14.5 2.95 1.0 2-1.12 2-0.45±0.15 0.4±0.15 2-0.6±0.15 2-0.45±0.15 1.2 1 2 2.54 R1.75 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO IC PC Topr Tstg Ratings 20 20 100.
  • 25 to +85.

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Datasheet Details

Part number PNZ150L
Manufacturer Panasonic
File Size 46.59 KB
Description Silicon NPN Phototransistor
Datasheet download datasheet PNZ150L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Phototransistors PNZ150L Silicon NPN Phototransistor Unit : mm ø3.5±0.2 4.8±0.3 2.4 2.4 Not soldered For optical control systems Features High sensitivity Wide spectral sensitivity, suited for detecting GaAs LEDs Low dark current Small size, thin side-view type package 4.5±0.3 4.2±0.3 2.3 1.9 42.7±1.0 2.2 14.5 2.95 1.0 2-1.12 2-0.45±0.15 0.4±0.15 2-0.6±0.15 2-0.45±0.15 1.2 1 2 2.54 R1.