PNZ150L Datasheet | Panasonic

Features High sensitivity Wide spectral sensitivity, suited for detecting Ga As LEDs Low dark current Small size, thin side-view type package 4.5±0.3 4.2±0.3 2.3 1.9 42.7±1.0 2.2 14.5 2.95 2-1.12 2-0.45±0.15 0.4±0.15 2-0.6±0.15 2-0.45±0.15 2 2.54 R1.75 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO IC PC Topr Tstg Ratings 20 20 100 - 25 to +85 - 30 to +100 Unit V m A m W ˚C ˚C 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Sensitivity to infrared emitters Collector saturation voltage Peak sensitivity wavelength Response time Acceptance half angle - 1 - 2 Symbol ICEO SIR- 1 VCE(sat) λP tr, tf- 2 θ VCEO = 10V Conditions VCE = 10V, H = 15µW/cm2 VCE = 10V, H = 15µW/cm2 VCEO = 10V VCC = 10V, ICE(L) = 5m A, RL = 100Ω Measured from the optical axis to the half power point min 16 typ 0.01 0.2 800 4 35 max 0.2 0.5 Unit µA µA V nm µs deg. Measurements were made using infrared light (λ = 940 nm) as a light source. Response time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) ,, ,, ,, 50Ω Phototransistors - Ta 120 20 ICE(L) - VCE Ta = 25˚C T = 2856K 10 2 ICE(L) - L ICE(L) (m A) VCE = 10V Ta = 25˚C T = 2856K PC (m W) ICE(L) (m...