High sensitivity : ICE(L) = 2 mA (min. ) (at L = 500 lx) Wide directional sensitivity for easy use Fast response : tr = 5 µs (typ. ) Signal mixing capability using base pin
1. 0± 0. 15
3.0±0.3 12.7 min. 2.0±0.1 0.2±0.05
3-ø0.45±0.05 2.54±0.25
0 0± 1. 5 .1
Small size (low in height) package
ø5.75 max. ø4.2±0.2
45±
Resin to cutoff visible light is used
3˚
3 1 2
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Em.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Phototransistors
PNZ109CL
Silicon NPN Phototransistor
Unit : mm
For optical control systems Features
High sensitivity : ICE(L) = 2 mA (min.) (at L = 500 lx) Wide directional sensitivity for easy use Fast response : tr = 5 µs (typ.) Signal mixing capability using base pin
1. 0± 0. 15
3.0±0.3 12.7 min. 2.0±0.1 0.2±0.05
3-ø0.45±0.05 2.54±0.25
0 0± 1. 5 .1
Small size (low in height) package
ø5.75 max. ø4.2±0.
PNZ109CL Datasheet
