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PNZ109F - Silicon NPN Phototransistor

Key Features

  • Flat window design which is suited to optical systems Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting devices : λp = 900 nm (typ. ) Fast response : tr = 8 µs (typ. ) Long lifetime, high reliability 4.5±0.2 ø4.6±0.15 Glass window 12.7 min. 3-ø0.45±0.05 2.54±0.25 0 1. .2 ±0 0± 0. 15 45± 3˚ 1. Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to.

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Datasheet Details

Part number PNZ109F
Manufacturer Panasonic
File Size 46.43 KB
Description Silicon NPN Phototransistor
Datasheet download datasheet PNZ109F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Phototransistors PNZ109F Silicon NPN Phototransistor Unit : mm For optical control systems Features Flat window design which is suited to optical systems Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting devices : λp = 900 nm (typ.) Fast response : tr = 8 µs (typ.) Long lifetime, high reliability 4.5±0.2 ø4.6±0.15 Glass window 12.7 min. 3-ø0.45±0.05 2.54±0.25 0 1. .2 ±0 0± 0. 15 45± 3˚ 1.