PNZ109L - Silicon NPN Phototransistor

Product Overview

Panasonic Semiconductor

Part number	PNZ109L
Manufacturer	Panasonic Semiconductor
File Size	46.18 KB
Description	Silicon NPN Phototransistor
Datasheet	PNZ109L Datasheet
Additional preview pages of the PNZ109L datasheet.

High sensitivity : ICE(L) = 3.5 mA (min. ) (at L = 100 lx) 12.7 min. 6.3±0.3 Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting devices : λp = 900 nm (typ. ) Fast response : tr = 5 µs (typ. ) Long lifetime, high reliability 3-ø0.45±0.05 2.54±0.25 0 0± 1. .2 .1 5 3˚ 45± 1. 0± 0 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage E.

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Published: May 9, 2005 |