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XN01558 - Silicon NPN Transistor

Datasheet Summary

Features

  • Two elements incorporated into one package (Emitter-coupled transistors).
  • Reduction of the mounting area and assembly cost by one half 2 0.30+0.10.
  • 0.05 10˚ 1.
  • Basic Part Number.
  • 2SD2623 × 2 1.1+0.2.
  • 0.1 (0.65).
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junct.

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Datasheet Details

Part number XN01558
Manufacturer Panasonic Semiconductor
File Size 203.89 KB
Description Silicon NPN Transistor
Datasheet download datasheet XN01558 Datasheet
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www.DataSheet4U.com Composite Transistors XN01558 Silicon NPN epitaxial planar type For low-frequency amplification 3 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 1.50+0.25 –0.05 2.8+0.2 –0.3 Unit: mm 0.16+0.10 –0.06 ■ Features • Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half 2 0.30+0.10 –0.05 10˚ 1 ■ Basic Part Number • 2SD2623 × 2 1.1+0.2 –0.1 (0.65) ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 25 20 12 0.
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