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XN01872 - Silicon n-channel enhancement MOSFET

Datasheet Summary

Features

  • s.
  • Two elements incorporated into one package (Source-coupled FETs).
  • Reduction of the mounting area and assembly cost by one half 3 2.90+0.20.
  • 0.05 1.9±0.1 (0.95) (0.95) 4 5 0.16+0.10.
  • 0.06 1.50+0.25.
  • 0.05 2.8+0.2.
  • 0.3 2 0.30+0.10.
  • 0.05 10˚ 1.
  • Basic Part Number.
  • 2SK0621 (2SK621) × 2 1.1+0.2.
  • 0.1 (0.65) Parameter Drain-source surrender voltage Gate-source voltage (Drain open) Drain curennt Peak drain current.

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Datasheet Details

Part number XN01872
Manufacturer Panasonic Semiconductor
File Size 214.80 KB
Description Silicon n-channel enhancement MOSFET
Datasheet download datasheet XN01872 Datasheet
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www.DataSheet4U.com Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm For switching ■ Features • Two elements incorporated into one package (Source-coupled FETs) • Reduction of the mounting area and assembly cost by one half 3 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 2 0.30+0.10 –0.05 10˚ 1 ■ Basic Part Number • 2SK0621 (2SK621) × 2 1.1+0.2 –0.1 (0.65) Parameter Drain-source surrender voltage Gate-source voltage (Drain open) Drain curennt Peak drain current Total power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PT Tch Tstg Rating 50 8 100 200 300 150 −55 to +150 Unit V V mA mA mW °C °C 1: Drain (FET1) 2: Drain (FET2) 3: Gate (FET2) EIAJ: SC-74A 0 to 0.
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