Datasheet Summary
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XN01872 (XN1872)
Silicon n-channel enhancement MOSFET
Unit: mm
For switching
- Features
- Two elements incorporated into one package (Source-coupled FETs)
- Reduction of the mounting area and assembly cost by one half
2.90+0.20
- 0.05 1.9±0.1 (0.95) (0.95) 4 5
0.16+0.10
- 0.06
1.50+0.25
- 0.05
2.8+0.2
- 0.3
2 0.30+0.10
- 0.05 10˚
- Basic Part Number
- 2SK0621 (2SK621) × 2
1.1+0.2
- 0.1
(0.65)
Parameter Drain-source surrender voltage Gate-source voltage (Drain open) Drain curennt Peak drain current Total power dissipation Channel temperature Storage temperature
Symbol VDSS VGSO ID IDP PT Tch Tstg
Rating 50 8 100 200 300 150
- 55 to...