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XN0F256 - Silicon NPN epitaxial planar type

Datasheet Summary

Features

  • s.
  • Two elements incorporated into one package (Collector-coupled transistors with built-in resistor).
  • Low collector-emitter saturation voltage VCE(sat).
  • Reduction of the mounting area and assembly cost by one half 4 2.90+0.20.
  • 0.05 1.9±0.1 (0.95) (0.95) 5 6 0.16+0.10.
  • 0.06 1.50+0.25.
  • 0.05 2.8+0.2.
  • 0.3 3 2 1 0.30+0.10.
  • 0.05 0.50+0.10.
  • 0.05 10˚.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base volta.

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Datasheet Details

Part number XN0F256
Manufacturer Panasonic Semiconductor
File Size 77.60 KB
Description Silicon NPN epitaxial planar type
Datasheet download datasheet XN0F256 Datasheet
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Full PDF Text Transcription

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Composite Transistors XN0F256 Silicon NPN epitaxial planar type Unit: mm For muting ■ Features • Two elements incorporated into one package (Collector-coupled transistors with built-in resistor) • Low collector-emitter saturation voltage VCE(sat) • Reduction of the mounting area and assembly cost by one half 4 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 10˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 30 20 5 600 300 150 −55 to +150 Unit V V V mA mW °C °C 1.
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