XN1110 - Silicon PNP epitaxial planer transistor

Panasonic

Key Features

1 Composite Transistors PT.
Ta 500 XN1110 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
VCE.
120.
100 VCE(sat).
IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 hFE.
IC VCE=.
10V.
30.
10.
3.
1 Ta=75˚C.
0.3.
0.1.
0.03.
25˚C 25˚C Forward current transfer ratio hFE Collector current IC (mA).

XN1110 silicon pnp epitaxial planer transistor by Panasonic - Datasheet Preview

Datasheet Details

Part number	XN1110
Manufacturer	Panasonic
File Size	33.50 KB
Description	Silicon PNP epitaxial planer transistor
Datasheet	XN1110 Datasheet

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Composite Transistors XN1110 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q UN1110 × 2 elements 0.8 s Basic Part Number of Element +0.