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XN1112 - Silicon PNP epitaxial planer transistor

Datasheet Summary

Features

  • 1 Composite Transistors PT.
  • Ta 500 XN1112 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
  • VCE.
  • 160.
  • 140 Ta=25˚C IB=.
  • 1.0mA.
  • 0.9mA.
  • 0.8mA.
  • 0.7mA.
  • 0.6mA.
  • 0.5mA.
  • 80.
  • 60.
  • 40.
  • 20 0 0.
  • 2.
  • 4.
  • 6.
  • 8.
  • 10.
  • 12.
  • 0.4mA.
  • 0.3mA.
  • 0.2mA.
  • 0.1mA VCE(sat).

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Datasheet Details

Part number XN1112
Manufacturer Panasonic Semiconductor
File Size 33.74 KB
Description Silicon PNP epitaxial planer transistor
Datasheet download datasheet XN1112 Datasheet
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Composite Transistors XN1112 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q UN1112 × 2 elements 0.8 s Basic Part Number of Element +0.
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