XN111F Datasheet PDF - Panasonic Semiconductor Silicon PNP epitaxial planer transistor Specs

XN111F - Silicon PNP epitaxial planer transistor

Datasheet Summary

Features

1 Composite Transistors PT.
Ta 500 XN111F Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
VCE.
240.
100 VCE(sat).
IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE.
IC VCE=.
10V.
200 Collector current IC (mA).
160 IB=.
1.0mA.
0.9mA.
0.8mA.
0.7mA.
0.6mA.
30.
10.

Datasheet Details

Part number	XN111F
Manufacturer	Panasonic Semiconductor
File Size	34.17 KB
Description	Silicon PNP epitaxial planer transistor
Datasheet	XN111F Datasheet
Additional preview pages of the XN111F datasheet.

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Full PDF Text Transcription

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Composite Transistors XN111F Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q UN111F × 2 elements 0.8 s Basic Part Number of Element +0.

Published: Apr 16, 2005 |