XN1113 Datasheet PDF - Panasonic Semiconductor Silicon PNP epitaxial planer transistor Specs

XN1113 - Silicon PNP epitaxial planer transistor

Datasheet Summary

Features

1 Composite Transistors PT.
Ta 500 XN1113 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
VCE.
160 IB=.
1.0mA.
140 VCE(sat).
IC.
100 hFE.
IC IC/IB=10 400 VCE=.
10V Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA).
120.
100.
80.
60.
40.
20 0 0.
2.
4.

Datasheet Details

Part number	XN1113
Manufacturer	Panasonic Semiconductor
File Size	33.96 KB
Description	Silicon PNP epitaxial planer transistor
Datasheet	XN1113 Datasheet
Additional preview pages of the XN1113 datasheet.

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Full PDF Text Transcription

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Composite Transistors XN1113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q UN1113 × 2 elements 0.8 s Basic Part Number of Element +0.

Published: Apr 16, 2005 |