XN1501 Datasheet PDF - Panasonic Semiconductor Silicon NPN epitaxial planer transistor Specs

XN1501 - Silicon NPN epitaxial planer transistor

Datasheet Summary

Features

1 Composite Transistors PT.
Ta 500 60 Ta=25˚C IB=160µA XN1501 IC.
VCE 1200 VCE=10V Ta=25˚C 1000 IB.
VBE Total power dissipation PT (mW) Collector current IC (mA) 400 50 40 120µA 100µA Base current IB (µA) 140µA 800 300 30 80µA 20 60µA 40µA 10 20µA 600 200 400 100 200 0 0 40 80 120 160 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) IC.
VBE 240 VCE.

Datasheet Details

Part number	XN1501
Manufacturer	Panasonic Semiconductor
File Size	30.05 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	XN1501 Datasheet
Additional preview pages of the XN1501 datasheet.

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Full PDF Text Transcription

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Composite Transistors XN1501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q 2SD601A × 2 elements 0.8 s Basic Part Number of Element +0.

Published: Apr 16, 2005 |