XN1507 Datasheet PDF - Panasonic Semiconductor Silicon NPN epitaxial planer transistor Specs

XN1507 - Silicon NPN epitaxial planer transistor

Datasheet Summary

Features

1 Composite Transistors PT.
Ta 500 XN1507 IC.
VCE 120 Ta=25˚C 120 VCE=10V 100 25˚C Ta=75˚C 80.
25˚C IC.
VBE Total power dissipation PT (mW) Collector current IC (mA) 80 300 60 Collector current IC (mA) 12 400 100 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 60 200 40 0.2mA 20 40 100 20 0 0 40 80 120 160 0 0 2 4 6 8 10 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter vol.

Datasheet Details

Part number	XN1507
Manufacturer	Panasonic Semiconductor
File Size	32.32 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	XN1507 Datasheet
Additional preview pages of the XN1507 datasheet.

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Full PDF Text Transcription

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Composite Transistors XN1507 Silicon NPN epitaxial planer transistor Unit: mm For high break down voltage and low noise amplification 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q 2SD814 × 2 elements 0.8 s Basic Part Number of Element +0.

Published: Apr 16, 2005 |