XN1509 Datasheet PDF - Panasonic Semiconductor Silicon NPN epitaxial planer transistor Specs

XN1509 - Silicon NPN epitaxial planer transistor

Datasheet Summary

Features

1 Composite Transistors PT.
Ta 240 120 Ta=25˚C XN1509 IC.
VCE 60 VCE=10V 50 25˚C Ta=75˚C 40.
25˚C IC.
VBE Total power dissipation PT (mW) 200 100 Collector current IC (mA) 160 80 IB=300µA 250µA 200µA 150µA 100µA Collector current IC (mA) 120 60 30 80 40 20 40 20 50µA 10 0 0 40 80 120 160 0 0 2 4 6 8 10 12 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(.

Datasheet Details

Part number	XN1509
Manufacturer	Panasonic Semiconductor
File Size	31.82 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	XN1509 Datasheet
Additional preview pages of the XN1509 datasheet.

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Full PDF Text Transcription

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Composite Transistors XN1509 Silicon NPN epitaxial planer transistor Unit: mm For high-frequency amplification 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q 2SC4561 × 2 elements 0.8 s Basic Part Number of Element +0.

Published: Apr 16, 2005 |