XN2210 - Silicon NPN epitaxial planer transistor

Features

1 Composite Transistors PT.
Ta 500 XN2210 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
VCE 60 VCE(sat).
IC 100 hFE.
IC IC/IB=10 400 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) 50 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 0.01 0.1.
25˚C Forward current transfer ratio hFE IB=1.0mA 0.9mA 0.8mA Ta=25˚C 350 300 Ta=75˚C 250 25˚C 200 150 100 50 0.
25˚C Collector curre.

Panasonic Semiconductor

Datasheet Details

Part number	XN2210
Manufacturer	Panasonic
File Size	33.14 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	XN2210 Datasheet
Additional preview pages of the XN2210 datasheet.

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Full PDF Text Transcription

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Composite Transistors XN2210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q UN1210 × 2 elements 0.8 s Basic Part Number of Element +0.

Published: Apr 16, 2005 |