XN2216 - Silicon NPN epitaxial planer transistor

Features

1 Composite Transistors PT.
Ta 500 XN2216 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
VCE 160 VCE(sat).
IC 100 hFE.
IC IC/IB=10 400 VCE=10V Ta=25˚C 140 IB=1.0mA Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 0.3 Ta=75˚C 0.1 0.03 0.01 0.1 25˚C Forward current transfer ratio hFE 350 Ta=75˚C 300 250.
25˚C 200 150 100 50 0 25˚C Collector current IC (mA) 120 100 0.9mA.

Panasonic Semiconductor

Datasheet Details

Part number	XN2216
Manufacturer	Panasonic
File Size	32.90 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	XN2216 Datasheet
Additional preview pages of the XN2216 datasheet.

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Full PDF Text Transcription

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Composite Transistors XN2216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q UN1216 × 2 elements 0.8 s Basic Part Number of Element +0.

Published: Apr 16, 2005 |