XN2212 - Silicon NPN epitaxial planer transistor

Features

1 Composite Transistors PT.
Ta 500 XN2212 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
VCE 160 VCE(sat).
IC 100 hFE.
IC IC/IB=10 400 VCE=10V Ta=25˚C 140 IB=1.0mA 0.9mA 0.8mA Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 0.3 0.1.
25˚C 0.03 0.01 0.1 120 100 80 0.7mA 0.6mA 0.5mA 0.4mA Forward current transfer ratio hFE Collector current IC (mA) 300 Ta=75˚C 200 25˚.

Panasonic Semiconductor

Datasheet Details

Part number	XN2212
Manufacturer	Panasonic
File Size	33.86 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	XN2212 Datasheet
Additional preview pages of the XN2212 datasheet.

📁 Similar Datasheet

XN2115 - 40V / 1.5A high dimming ratio LED constant current driver (Innuovo SEMI)
XN297 - 2.4G high-speed single-chip wireless transceiver chip (PANCHIP)

Other Datasheets by Panasonic Semiconductor

XN2210 - Silicon NPN epitaxial planer transistor
XN2211 - Silicon NPN epitaxial planer transistor
XN2215 - Silicon NPN epitaxial planer transistor
XN2216 - Silicon NPN epitaxial planer transistor
XN2401 - Silicon PNP epitaxial planer transistor
XN2501 - Silicon NPN epitaxial planer transistor
XN2531 - Silicon NPN epitaxial planer transistor

Full PDF Text Transcription

Click to expand full text

Composite Transistors XN2212 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q UN1212 × 2 elements 0.8 s Basic Part Number of Element +0.

Published: Apr 16, 2005 |