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XP1D873 - Silicon N-channel junction FET

Features

  • q q q 0.9± 0.1 s Basic Part Number of Element q s Absolute Maximum Ratings Parameter Gate to drain voltage Rating Drain current of element Gate current Total power dissipation Overall Channel temperature Storage temperature Symbol VGDS ID IG PT Tch Tstg (Ta=25˚C) Ratings.
  • 50 30 10 150 150.
  • 55 to +150 Unit V mA mA mW ˚C ˚C 1 : Source (FET1) 2 : Drain (FET1, 2) 3 : Source (FET2) 0 to 0.1 2SK1103 × 2 elements 0.7±0.1 0.2 Two elements incorporated into one package. (Drain-c.

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Datasheet Details

Part number XP1D873
Manufacturer Panasonic Semiconductor
File Size 29.96 KB
Description Silicon N-channel junction FET
Datasheet download datasheet XP1D873 Datasheet
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Full PDF Text Transcription

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Composite Transistors XP1D873 Silicon N-channel junction FET Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.2±0.05 0.12 – 0.02 +0.05 For analog switching 0.65 s Features q q q 0.9± 0.1 s Basic Part Number of Element q s Absolute Maximum Ratings Parameter Gate to drain voltage Rating Drain current of element Gate current Total power dissipation Overall Channel temperature Storage temperature Symbol VGDS ID IG PT Tch Tstg (Ta=25˚C) Ratings –50 30 10 150 150 –55 to +150 Unit V mA mA mW ˚C ˚C 1 : Source (FET1) 2 : Drain (FET1, 2) 3 : Source (FET2) 0 to 0.1 2SK1103 × 2 elements 0.7±0.1 0.2 Two elements incorporated into one package. (Drain-coupled FETs) Reduction of the mounting area and assembly cost by one half. Low-frequency and low-noise J-FET. 2.0±0.1 1 2 3 5 0.65 4 0.2±0.
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