Datasheet Summary
posite Transistors
N-channel junction FET
Unit: mm
For low-frequency impedance conversion For infrared sensor
0.65 2.0±0.1
2.1±0.1 0.425 1.25±0.1 0.425
0.65 s Features q q
1 2 3
Two elements incorporated into one package. (Drain-coupled FETs) Reduction of the mounting area and assembly cost by one half.
0.9± 0.1
4 s Basic Part Number of Element q...