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XP1D874 - N-channel junction FET

Features

  • q q 1 2 3 5 0.2 Two elements incorporated into one package. (Drain-coupled FETs) Reduction of the mounting area and assembly cost by one half. 0.9± 0.1 4 s Basic Part Number of Element q s Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol VGDO VGSO IG ID PT Tj Tstg Ratings.
  • 40.
  • 40 10 1 150 150.
  • 55 to +150 Unit V V mA mA mW ˚C ˚C 1 : Source (FET1) 2 : Drain 3 : Source (FET2) 0 to 0.1 2SK1842 × 2 elements 0.7±0.1 0.12.
  • 0.02 +0.05 4 : Gate (FET2) 5.

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Datasheet Details

Part number XP1D874
Manufacturer Panasonic Semiconductor
File Size 28.10 KB
Description N-channel junction FET
Datasheet download datasheet XP1D874 Datasheet
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Full PDF Text Transcription

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Composite Transistors XP1D874 N-channel junction FET Unit: mm For low-frequency impedance conversion For infrared sensor 0.65 2.0±0.1 2.1±0.1 0.425 1.25±0.1 0.425 0.65 s Features q q 1 2 3 5 0.2 Two elements incorporated into one package. (Drain-coupled FETs) Reduction of the mounting area and assembly cost by one half. 0.9± 0.1 4 s Basic Part Number of Element q s Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol VGDO VGSO IG ID PT Tj Tstg Ratings –40 –40 10 1 150 150 –55 to +150 Unit V V mA mA mW ˚C ˚C 1 : Source (FET1) 2 : Drain 3 : Source (FET2) 0 to 0.1 2SK1842 × 2 elements 0.7±0.1 0.12 – 0.02 +0.
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