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Transistors
2SC5725
Silicon NPN epitaxial planar type
For DC-DC converter
■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature Storage temperature
VCBO VCEO VEBO
IC ICP PC Tj Tstg
20 15 5 2 6 600 150 −55 to +150
V V V A A mW °C °C
Note) *: Measure on the ceramic substrate at 15 mm × 15 mm × 0.6 mm
0.40+–00..0150 3
Unit: mm
0.16+–00..0160
0.4±0.2
1.50–+00..0255 2.8–+00..32
5˚
(0.65)
12 (0.
2SC5725 Datasheet
