Panasonic 2SD1751
Silicon NPN triple diffusion planar type Transistor
FEATURES
q q 10.0 –0. +0.3 7.2±0.3 0.8±0.2 1.1±0.1 0.85±0.1 0.4±0.1 q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 60 60 6 4 2 15 1.3 150 –55 to +150 Unit V 1.0±0.2 0.75±0.1 2.3±0.2 4.6±0.4 1 2 3 sABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter I Type Package 3.5±0.2 2.0±0.2 7.0±0.3 Unit: mm 0 to 0.15 3.0±0.2 10.2±0.3 7.2±0.3 V A A 1.0 max. 2.5 1.1±0.1 0.75±0.1 0.5 max. 0.9±0.1 0 to 0.15 W 1 2 3 ˚C ˚C 2.3±0.2 4.6±0.4 1:Base 2:Collector 3:Emitter I Type Package (Y) sELECTRICAL CHARACTERISTICS
Parameter Col...