Panasonic 2SD1753
Silicon NPN triple diffusion planar type Transistor
FEATURES
1.1±0.1 0.75±0.1 0.85±0.1 0.4±0.1 2.3±0.2 4.6±0.4 1 2 3 sABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 1:Base 2:Collector 3:Emitter I Type Package 3.5±0.2 2.0±0.2 7.0±0.3 Unit: mm 0 to 0.15 7.2±0.3 V A A A W ˚C 3.0±0.2 1.0 max. 2.5 1.1±0.1 0.75±0.1 0.5 max. 0.9±0.1 0 to 0.15 1 2 3 2.3±0.2 4.6±0.4 ˚C 1:Base 2:Collector 3:Emitter I Type Package (Y) sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency (TC=25˚C) Symbol ICBO IEBO VCEO hFE* VCE(sat) fT Conditions VCB = 200V, IE = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.2A IC = 0.5A, IB = 0.02A VCE = 4V, IC = 0.1A, f = 10...