Panasonic 2SD1752
Silicon NPN epitaxial planar type Transistor
FEATURES
1.1±0.1 0.85±0.1 0.4±0.1 1.0±0.2 10.0 –0. +0.3 0.75±0.1 2.3±0.2 4.6±0.4 1 2 3 sABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to 2SD1752 2SD1752A 2SD1752 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter I Type Package 3.5±0.2 2.0±0.2 7.0±0.3 Unit: mm 0 to 0.15 3.0±0.2 10.2±0.3 1.0 max. Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature A A 1.1±0.1 2.5 0.75±0.1 0.5 max. 0.9±0.1 0 to 0.15 W ˚C 1 2 3 2.3±0.2 ˚C 4.6±0.4 1:Base 2:Collector 3:Emitter I Type Package (Y) sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1752 2SD1752A 2SD1752 2SD1752A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 * Conditions VCB = 40V, IE = 0 VCB = 50V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 3A IC = 10A, IB = 0.33A IC = 10A, IB = 0.33A VCE = 10V, IC = 0.5A, f = 10MHz VCB = 10V, IE =...