Panasonic 2SK0662
Silicon N-Channel Junction FET
| Part No. | 2SK0662 |
|---|---|
| Datasheet | 2SK0662 Download |
| Manufacturer |  Panasonic |
| Description | Silicon N-Channel Junction FET |
| Buy | Stock & Price |
FEATURES
0.3+0.1 –0.0 3 0.15+0.10 –0.05 G High mutual conductance gm G Low noise type G S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 1.25±0.10 2.1±0.1 5° 1 2 (0.65) (0.65) 1.3±0.1 IABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO ID IG PD Tj Tstg Ratings 30 −30 20 10 150 125 −55 to +125 Unit V V mA mA mW °C °C 2.0±0.2 10° 1: Source 2: Drain 3: Gate 0 to 0.1 0.9±0.1 0.9+0.2 –0.1 EIAJ: SC-70 SMini3-G1 Package Marking Symbol (Example): 1O ❘IELECTRICAL CHARACTERISTICS
(Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Source cut-off voltage Mutual conductance Symbol IDSS* IGSS VGSC gm Conditions VDS = 10V, VGS = 0 VGS = −30V, VDS = 0 VDS = 10V, ID = 10µA VDS = 10V, ID = 0.5mA, f = 1kHz VDS = 10V, VGS = 0, f = 1kHz VDS = 10V, V...
