Panasonic 2SK0664
Silicon N-Channel MOS FET
| Part No. | 2SK0664 |
|---|---|
| Datasheet | 2SK0664 Download |
| Manufacturer |  Panasonic |
| Description | Silicon N-Channel MOS FET |
| Buy | Stock & Price |
FEATURES
(0.425) 0.3+0.1 –0.0 3 0.15+0.10 –0.05 1.25±0.10 (0.65) (0.65) 1.3±0.1 2.0±0.2 10° Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 150 150 −55 to +150 Unit V V mA mA mW °C °C 1: Gate 2: Source 3: Drain 0 to 0.1 0.9±0.1 0.9+0.2 –0.1 IABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) EIAJ: SC-70 SMini3-G1 Package Marking Symbol: 3N Internal Connection D G S IELECTRICAL CHARACTERISTICS
(Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Turn-off time * Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Ciss Coss Crss ton* toff* Conditions VDS = 10V, VGS = 0...
