Panasonic 2SK0663
Silicon N-Channel Junction FET
| Part No. | 2SK0663 |
|---|---|
| Datasheet | 2SK0663 Download |
| Manufacturer |  Panasonic |
| Description | Silicon N-Channel Junction FET |
| Buy | Stock & Price |
FEATURES
3 (0.65) (0.65) 1.3±0.1 2.0±0.2 IABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO VGSO ID IG PD Tj Tstg Ratings 55 −55 −55 30 10 150 125 −55 to +125 Unit V V V mA mA mW °C °C 10° 1: Source 2: Drain 3: Gate 0 to 0.1 0.9±0.1 0.9+0.2 –0.1 EIAJ: SC-70 SMini3-G1 Package Marking Symbol (Example): 2B IELECTRICAL CHARACTERISTICS
(Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Mutual conductance Symbol IDSS* IGSS VGDS VGSC gm Conditions VDS = 10V, VGS = 0 VGS = −30V, VDS = 0 IG = 100µA, VDS = 0 VDS = 10V, ID = 10µA VDS = 10V, ID = 5mA, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, Rg = 100kΩ f = 100Hz 2.5 7.5 6.5 1.9 2.5 55 80 −5 min 1 typ max 12 −10 Unit mA nA V V mS pF pF dB Input capacitance (Common Sour...
