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Normally closed type with reinforced insulation
(AQY410EH, 414EH) (AQY412EH)
GE 1 Form B
(AQY41❍EH)
4.78 .188
6.4
.252 3.2 .126
4.78 .188
(Height includes standoff)
6.4 .252
2.9 .114
mm inch
14
23
RoHS compliant
FEATURES
1. 1 Form B output type 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method.
Cross section of the normally-closed type of power MOS
Passivation membrane
Source electrode Gate electrode
Intermediate insulating
membrane
N+ P+ N+
N+ P+ N+
Gate oxidation membrane
N– N+
Drain electrode
3. Reinforced insulation of 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation).
4.
AQY412EH Datasheet
