q High breakdown voltage, and high reliability through the use of a glass passivation layer
q High-speed switching q Wide area of safe operation (ASO)
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCES VCEO VEBO ICP IC IB
PC
1700 1700 600
5 30 20 10 200 3.5
Junction temperature Storage.
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Power Transistors
2SC5413
Silicon NPN triple diffusion mesa type
20.0±0.5Product lifecyclennuaen 2.
C5413 Datasheet