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C5813 - Silicon NPN Transistor

Datasheet Summary

Features

  • s.
  • Low collector-emitter saturation voltage VCE(sat).
  • Mini type package, allowing downsizing of the equipment and 0.40+.
  • 00..0150 3 0.16+.
  • 00..0160 0.4±0.2 1.50.
  • +00..0255 2.8.
  • +00..32 automatic insertion through the tape packing 1 2 (0.95) (0.95) 5˚ (0.65) 1.9±0.1 /.
  • Absolute Maximum Ratings Ta = 25°C 2.90+.
  • 00..0250 10˚ Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 80 V c e. d ty Coll.

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Datasheet Details

Part number C5813
Manufacturer Panasonic
File Size 213.59 KB
Description Silicon NPN Transistor
Datasheet download datasheet C5813 Datasheet
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Full PDF Text Transcription

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Transistors 2SC5813 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and 0.40+–00..0150 3 0.16+–00..0160 0.4±0.2 1.50–+00..0255 2.8–+00..32 automatic insertion through the tape packing 1 2 (0.95) (0.95) 5˚ (0.65) 1.9±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 2.90+–00..0250 10˚ Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 80 V c e. d ty Collector-emitter voltage (Base open) VCEO 80 V n d stag tinue Emitter-base voltage (Collector open) VEBO 5 0 to 0.1 1.1–+00..12 1.1–+00..13 V a e cle con Collector current IC 1.
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