DB2232000L
DB2232000L is Silicon epitaxial planar type Schottky Barrier Diode manufactured by Panasonic.
Features
- Low forward voltage VF
- Small reverse leakage current
- Halogen-free / Ro HS pliant
(EU Ro HS / UL-94 V-0 / MSL:Level 1 pliant)
- Marking Symbol: B5
- Packaging Embossed type (Thermo-pression sealing) : 3 000 pcs / reel (standard)
- Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Rating
Reverse voltage
VR 30
Repetitive peak reverse voltage
VRRM
Peak forward current
IF(AV)
Non-repetitive peak forward surge current
- 1 IFSM
1.5 30
Junction temperature
Tj 125
Operating ambient temperature
Topr -40 to +85
Storage temperature
Tstg -55 to +125
Note:
- 1 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Unit V V A A °C °C °C
Product Standards
Schottky Barrier Diode
Unit: mm 0.13
2.6 3.5
1. Cathode 2. Anode
Panasonic JEITA Code
Mini2-F4-B SC-109D...
