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DB2232000L - Silicon epitaxial planar type Schottky Barrier Diode

Key Features

  • s.
  • Low forward voltage VF.
  • Small reverse leakage current.
  • Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant).
  • Marking Symbol: B5.
  • Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard).
  • Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Reverse voltage VR 30 Repetitive peak reverse voltage VRRM 30 Peak forward current IF(AV) Non-repetitive peak forward surge current.
  • 1 IFSM 1.5 30 Juncti.

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Datasheet Details

Part number DB2232000L
Manufacturer Panasonic
File Size 250.92 KB
Description Silicon epitaxial planar type Schottky Barrier Diode
Datasheet download datasheet DB2232000L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DReovcisNioon. . T3 T4-EA-12656 DB2232000L Silicon epitaxial planar type For rectification  Features  Low forward voltage VF  Small reverse leakage current  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  Marking Symbol: B5  Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Reverse voltage VR 30 Repetitive peak reverse voltage VRRM 30 Peak forward current IF(AV) Non-repetitive peak forward surge current *1 IFSM 1.