Panasonic MA112
Silicon Transistor
| Part No. | MA112 |
|---|---|
| Datasheet | MA112 Download |
| Manufacturer |  Panasonic |
| Description | Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Small S-mini type package, allowing high-density mounting● Ensuring the average forward current capacity IF(AV) = 200 mA 1.25±0.1 0.35±0.1 0.7±0.1 1 0 to 0.1 1.7±0.1 2.5±0.2 0.16+0.1 –0.06 5° Parameter Reverse voltage (DC) Peak reverse voltage Average forward current *1 Symbol VR VRM IF(AV) IFM IFSM Tj Tstg Rating 40 40 200 600 1 150 −55 to +150 Unit 0 to 0.1 V V mA mA A °C °C Peak forward current Non-repetitive peak forward surge current*2 Junction temperature Storage temperature 1 : Anode 2 : Cathode SMini2-F1 Package Marking Symbol: 1C Note) *1 : With a printed-circuit board *2 : t = 1 s I
ELECTRICAL CHARACTERISTICS
Ta = 25°C Parameter Reverse current (DC) Symbol IR1 IR2 IR3 Forward voltage (DC) Terminal capacitance Reverse recovery time* VF Ct trr VR = 15 V VR = 35 V VR = 35 V, Ta = 100°C IF = 200 mA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1● IR, RL = 100 Ω Conditions Min Typ Max 50 500 100 1.1 4 10 Unit nA nA µA V pF ns Note) 1. Rated input/output frequency:...
