MA112 - Silicon Transistor

Panasonic

Key Features

Small S-mini type package, allowing high-density mounting.
Ensuring the average forward current capacity IF(AV) = 200 mA 1.25±0.1 0.35±0.1 0.7±0.1 1 0 to 0.1 1.7±0.1 2.5±0.2 0.16+0.1.
0.06 5° Parameter Reverse voltage (DC) Peak reverse voltage Average forward current.
1 Symbol VR VRM IF(AV) IFM IFSM Tj Tstg Rating 40 40 200 600 1 150.
55 to +150 Unit 0 to 0.1 V V mA mA A °C °C Peak forward current Non-repetitive peak forward surge current.
2 J.

MA112 silicon transistor by Panasonic - Datasheet Preview

Datasheet Details

Part number	MA112
Manufacturer	Panasonic
File Size	78.22 KB
Description	Silicon Transistor
Datasheet	MA112 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Switching Diodes MA2J112 (MA112) Silicon epitaxial planar type Unit : mm For switching circuits I Features • Small S-mini type package, allowing high-density mounting • Ensuring the average forward current capacity IF(AV) = 200 mA 1.25±0.1 0.35±0.1 0.7±0.1 1 0 to 0.1 1.7±0.1 2.5±0.2 0.16+0.1 –0.06 5° Parameter Reverse voltage (DC) Peak reverse voltage Average forward current *1 Symbol VR VRM IF(AV) IFM IFSM Tj Tstg Rating 40 40 200 600 1 150 −55 to +150 Unit 0 to 0.