Panasonic MA113
Silicon epitaxial planar type Switching Diodes
FEATURES
● Allowing high-density mounting● Ensuring the forward current (Average) capacity IF(AV) = 200 mA
● High breakdown voltage: VR = 80 V 1.25±0.1 0.35±0.1 Unit: mm 0.7±0.1 1 0 to 0.1 1.7±0.1 2.5±0.2 0 to 0.1 5˚
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ABSOLUTE MAXIMUM RATINGS
Ta = 25°C Parameter Symbol Rating Reverse voltage Maximum peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current * VR VRM IF(AV) IFM IFSM 80 80 200 600 1 Junction temperature Storage temperature Tj 150 Tstg −55 to +150 Note) *: t = 1 s Unit V V mA mA A °C °C 0.4±0.1 2 0.5±0.1 5˚ 0.16+–00..016 (0.15) 1: Anode 2: Cathode EIAJ: SC-76 Marking Symbol: 1D SMini2-F1 Package●
ELECTRICAL CHARACTERISTICS
Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Forward voltage Reverse curren