MA113 - Silicon epitaxial planar type Switching Diodes
Panasonic
Key Features
s.
Allowing high-density mounting.
Ensuring the forward current (Average) capacity IF(AV) = 200 mA.
High breakdown voltage: VR = 80 V
1.25±0.1 0.35±0.1
Unit: mm 0.7±0.1
1 0 to 0.1
1.7±0.1 2.5±0.2
0 to 0.1 5˚.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Reverse voltage Maximum peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current.
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This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA2J113 (MA113)
Silicon epitaxial planar type
For switching circuits
■ Features • Allowing high-density mounting • Ensuring the forward current (Average) capacity IF(AV) = 200 mA • High breakdown voltage: VR = 80 V
1.25±0.1 0.35±0.1
Unit: mm 0.7±0.1
1 0 to 0.1
1.7±0.1 2.5±0.2
0 to 0.1 5˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Reverse voltage Maximum peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current *
VR VRM IF(AV) IFM IFSM
80 80 200 600 1
Junction temperature Storage temperature
Tj 150 Tstg −55 to +150
Note) *: t = 1 s
Unit V V mA mA A
°C °C
0.4±0.1
2
0.5±0.1 5˚
0.16+–00..016
(0.
MA113 Datasheet
