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MA2C856 Datasheet Band Switching Diodes

Manufacturer: Panasonic

Overview: Band Switching Diodes MA2C856 Silicon epitaxial planar type Unit : mm For band switching φ 0.45 max. • Extra-small DHD envelope, allowing to insert into a 5 mm pitch hole • Less voltage dependence of the terminal capacitance Ct • Low forward dynamic resistance rf • Optimum for a band switching of a tuner 0.2 max. 0.2 max. I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature Storage temperature Symbol VR IF Topr Tstg Rating 35 100 −25 to +85 −55 to +100 Unit V mA °C °C 2 φ 1.75 max. 1 : Cathode 2 : Anode JEDEC : DO-34 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC)* Symbol IR VF Ct rf VR = 33 V IF = 100 mA VR = 15 V, f = 1 MHz IF = 3 mA, f = 100 MHz Conditions Min Typ Max 100 1 2 0.85 Unit nA V pF Ω Forward voltage (DC) Terminal capacitance Forward dynamic resistance Note) 1 Rated input/output frequency: 100 MHz 2 * : Measurement with the beam shielded I Cathode Indication Type No. Color MA2C856 Yellow 13 min. 2.2 ± 0.3 13 min.

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