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Band Switching Diodes
MA2C859
Silicon epitaxial planar type
Unit : mm
For band switching
φ 0.45 max.
• Extra-small DHD envelope, allowing to insert into a 5 mm pitch hole • Less voltage dependence of the terminal capacitance Ct • Low forward dynamic resistance rf • Optimum for a band switching of a tuner
0.2 max.
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature Storage temperature Symbol VR IF Topr Tstg Rating 35 100 −25 to +85 −55 to +100 Unit V mA °C °C
2
φ 1.75 max.
1 : Cathode 2 : Anode JEDEC : DO-34
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC)*1 Symbol IR VF Ct r f* 2 rf
*3
Conditions VR = 33 V IF = 100 mA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz
Min
Typ
Max 100 1.0
13 min.
MA2C859 Datasheet
