Datasheet Details
| Part number | MA2C859 |
|---|---|
| Manufacturer | Panasonic |
| File Size | 44.52 KB |
| Description | Band Switching Diodes |
| Datasheet | MA2C859_PanasonicSemiconductor.pdf |
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Overview: Band Switching Diodes MA2C859 Silicon epitaxial planar type Unit : mm For band switching φ 0.45 max. • Extra-small DHD envelope, allowing to insert into a 5 mm pitch hole • Less voltage dependence of the terminal capacitance Ct • Low forward dynamic resistance rf • Optimum for a band switching of a tuner 0.2 max. I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature Storage temperature Symbol VR IF Topr Tstg Rating 35 100 −25 to +85 −55 to +100 Unit V mA °C °C 2 φ 1.75 max. 1 : Cathode 2 : Anode JEDEC : DO-34 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC)*1 Symbol IR VF Ct r f* 2 rf *3 Conditions VR = 33 V IF = 100 mA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz Min Typ Max 100 1.0 13 min. 2.2 ± 0.3 1st Band 2nd Band 0.2 max. 13 min.
| Part number | MA2C859 |
|---|---|
| Manufacturer | Panasonic |
| File Size | 44.52 KB |
| Description | Band Switching Diodes |
| Datasheet | MA2C859_PanasonicSemiconductor.pdf |
|
|
|
Compare MA2C859 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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