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Switching Diodes
MA2J112
Silicon epitaxial planar type
Unit : mm
For switching circuits
K A
0.625
• Small S-mini type package, allowing high-density mounting • Ensuring the average forward current capacity IF(AV) = 200 mA
2
1
Parameter Reverse voltage (DC) Peak reverse voltage Average forward current *1 Peak forward current Non-repetitive peak forward surge current*2 Junction temperature Storage temperature
Symbol VR VRM IF(AV) IFM IFSM Tj Tstg
Rating 40 40 200 600 1 150 −55 to +150
Unit V V mA mA A °C °C
0.4 ± 0.1
1.7 ± 0.1 2.5 ± 0.2
0.4 ± 0.