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MA2J112 Datasheet Switching Diodes

Manufacturer: Panasonic

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Overview

Switching Diodes MA2J112 Silicon epitaxial planar type Unit : mm For switching circuits K A 0.625 • Small S-mini type package, allowing high-density mounting • Ensuring the average forward current capacity IF(AV) = 200 mA 2 1 Parameter Reverse voltage (DC) Peak reverse voltage Average forward current *1 Peak forward current Non-repetitive peak forward surge current*2 Junction temperature Storage temperature Symbol VR VRM IF(AV) IFM IFSM Tj Tstg Rating 40 40 200 600 1 150 −55 to +150 Unit V V mA mA A °C °C 0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 0.4 ± 0.1 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 1C Note) *1 : With a printed-circuit board *2 : t = 1 s I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol IR1 IR2 IR3 Forward voltage (DC) Terminal capacitance Reverse recovery time* VF Ct trr VR = 15 V VR = 35 V VR = 35 V, Ta = 100°C IF = 200 mA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω Conditions Min Typ Max 50 500 100 1.1 4 10 Unit nA nA µA V pF ns Note) 1.

Rated input/output frequency: 100 MHz 2.

* : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 0.7 ± 0.1 I Absolute Maximum Ratings Ta = 25°C 0.16 − 0.06 + 0.1 1.25 ± 0.1 0.5 ± 0.

Key Features

  • 0.3 1 MA2J112 IF  VF 1 000 100 Ta = 150°C Switching Diodes IR  V R 1.6 1.4 VF  Ta 100 Forward current IF (mA) 10 Reverse current IR (µA) Forward voltage VF (V) Ta = 150°C 100°C 10 25°C.
  • 20°C 1 1.2 1.0 0.8 0.6 10 mA 0.4 3 mA 0.2 IF = 200 mA 100°C 1 0.1 25°C 0.01 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0 10 20 30 40 50 60 0.
  • 40 0 40 80 120 160 200 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (°C) IR  Ta 100 VR.

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