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Switching Diodes
MA2J113
Silicon epitaxial planar type
Unit : mm
For switching circuits
K A
0.625
I Features
• Small S-mini type package, allowing high-density mounting • Ensuring the average forward current capacity IF(AV) = 200 mA • High breakdown voltage (VR = 80 V)
0.5 ± 0.1
2
0.16 − 0.06
+ 0.1
1
Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Noe) * : t=1s
Symbol VR VRM IF IFM IFSM Tj Tstg
Rating 80 80 200 600 1 150 −55 to +150
Unit V V mA mA A °C °C
0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 0.4 ± 0.
MA2J113 Datasheet
