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Rectifier Diodes
MA2J114
Silicon epitaxial planar type
Unit : mm
For small power rectification I Features
0.5 ± 0.1
K
A 0.625
2 0.16 − 0.06
+ 0.1
1
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak reverse voltage Output current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = l s Symbol VR VRM IO IFRM IFSM Tj Tstg Rating 150 150 200 600 Unit V V mA mA
1.25 ± 0.1 0.7 ± 0.1
0.4 ± 0.1
1.7 ± 0.1 2.5 ± 0.2
0.4 ± 0.1
1 150 −55 to +150
A °C °C
1 Anode 2 Cathode S-Mini Type Package (2-pin)
Marking Symbol: 1E
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Symbol IR VF Ct VR = 150 V IF = 200 mA VR = 0 V, f = 1 MHz 4.
MA2J114 Datasheet
