Low forward rise voltage (VF) and satisfactory wave detection efficiency (η).
Small temperature coefficient of forward characteristic.
Extremely low reverse current IR
2
1
0.01 ± 0.01
0.12.
0.02
+ 0.05
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak reverse voltage Peak forward current Forward current (DC) Junction temperature Storage tempe.
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Schottky Barrier Diodes (SBD)
MA2S728
Silicon epitaxial planar type
Unit : mm
0.30 ± 0.05
For switching circuits I Features
• Super-small SS-mini type 2-pin package • Allowing high-density mounting • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Small temperature coefficient of forward characteristic • Extremely low reverse current IR
2
1
0.01 ± 0.01
0.12 − 0.02
+ 0.05
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak reverse voltage Peak forward current Forward current (DC) Junction temperature Storage temperature Symbol VR VRM IFM IF Tj Tstg Rating 30 30 150 30 125 −55 to +125 Unit V V mA mA °C °C
0 − 0.05
+0
1.20 − 0.03
+ 0.05
1.60 ± 0.
MA2S728 Datasheet
