Datasheet Summary
Schottky Barrier Diodes (SBD)
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
K A 0.625
I Features
0.5 ± 0.1
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current- Junction temperature Storage temperature
Symbol VR VRRM IF(AV) IFSM Tj Tstg
Rating 20 20 500 3 125
- 55 to +125
Unit V V mA A °C °C
0.4 ± 0.1
1.7 ± 0.1 2.5 ± 0.2
0.4 ± 0.1
1 : Anode 2 : Cathode S-Mini Type Package (2-pin)
Note)
- : The peak-to-peak value in one cycle of 50 Hz sine-wave (nonrepetitive)
Marking Symbol: 2H Internal Connection
I Electrical Characteristics Ta = 25°C
Parameter Reverse...