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MA2ZD02 - Schottky Barrier Diodes

Features

  • 0.5 ± 0.1 2 1 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current.
  • Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 20 20 500 3 125.
  • 55 to +125 Unit V V mA A °C °C 0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 0.4 ± 0.1 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Note).
  • : The peak-to-peak value in one cycle of 50 Hz sine-wave (nonrepetitive) Marking Symbol: 2H Interna.

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Datasheet Details

Part number MA2ZD02
Manufacturer Panasonic
File Size 46.85 KB
Description Schottky Barrier Diodes
Datasheet download datasheet MA2ZD02 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA2ZD02 Silicon epitaxial planar type Unit : mm For high-frequency rectification K A 0.625 I Features 0.5 ± 0.1 2 1 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 20 20 500 3 125 −55 to +125 Unit V V mA A °C °C 0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 0.4 ± 0.
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