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Fast Recovery Diodes (FRD)
MA3G655
Silicon planar type (cathode common)
Unit : mm
0.7
For switching circuits I Features
• High reverse voltage VR • Low forward voltage VF • Fast reverse recovery time trr
15.0 ± 0.3 11.0 ± 0.2
5.0 ± 0.2 3.2
21.0 ± 0.5 15.0 ± 0.2
φ 3.2 ± 0.1
16.2 ± 0.5 12.5 3.5 Solder Dip
2.0 ± 0.2
2.0 ± 0.1 0.6 ± 0.2
I Absolute Maximum Ratings Ta = 25°C
Parameter Repetitive peak reverse voltage Non-repetitive peak reverse surge voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VRRM VRSM IF(AV) IFSM Tj Tstg Rating 300 300 20 150 −40 to +150 −40 to +150 Unit V V A A °C °C
1.1 ± 0.1 5.45 ± 0.3 10.9 ± 0.
MA3G655 Datasheet
