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MA3G751 - Silicon epitaxial planar type (cathode common)

Features

  • Forward current (average) IF(AV): 20 A type.
  • High reliability caused by sealed in the TOP-3F (Full-pack package).
  • Cathode common dual type.
  • Low forward rise voltage VF 0.7 15.0 ± 0.3 11.0 ± 0.2 5.0 ± 0.2 3.2 21.0 ± 0.5 15.0 ± 0.2 φ 3.2 ± 0.1 16.2 ± 0.5 12.5 3.5 Solder Dip 2.0 ± 0.2 2.0 ± 0.1 0.6 ± 0.2 1.1 ± 0.1 5.45 ± 0.3 I Absolute Maximum Ratings Ta = 25°C Parameter Repetitive peak reverse voltage MA3G751 MA3G751A IF(AV) IFSM Tj Tstg Symbol VRRM Ra.

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Datasheet Details

Part number MA3G751
Manufacturer Panasonic
File Size 40.56 KB
Description Silicon epitaxial planar type (cathode common)
Datasheet download datasheet MA3G751 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA3G751, MA3G751A Silicon epitaxial planar type (cathode common) Unit : mm For switching power supply I Features • Forward current (average) IF(AV): 20 A type • High reliability caused by sealed in the TOP-3F (Full-pack package) • Cathode common dual type • Low forward rise voltage VF 0.7 15.0 ± 0.3 11.0 ± 0.2 5.0 ± 0.2 3.2 21.0 ± 0.5 15.0 ± 0.2 φ 3.2 ± 0.1 16.2 ± 0.5 12.5 3.5 Solder Dip 2.0 ± 0.2 2.0 ± 0.1 0.6 ± 0.2 1.1 ± 0.1 5.45 ± 0.3 I Absolute Maximum Ratings Ta = 25°C Parameter Repetitive peak reverse voltage MA3G751 MA3G751A IF(AV) IFSM Tj Tstg Symbol VRRM Rating 40 45 20 150 −40 to +125 −40 to +125 A A °C °C Unit V 10.9 ± 0.
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