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MA3G762 - Silicon epitaxial planar type (cathode common)

Features

  • Forward current (average) IF(AV): 20 A type.
  • Repetitive peak reverse voltage VRRM: 90 V type.
  • High reliability caused by sealed in the TOP-3F (Full-pack package).
  • Cathode common dual type 15.0 ± 0.5 7.2 ± 0.3 5.0 ± 0.2 3.2 ± 0.2 21.0 ± 0.5 15.0 ± 0.2 φ 3.2 ± 0.1 3.5 ± 12.7 ± 0.3 0.3 Solder Dip 2.0 ± 0.1 16.2 ± 0.5 2.0 ± 0.1 0.6.
  • 0.1 + 0.2 1.1 ± 0.1 5.45 ± 0.3 I Absolute Maximum Ratings Ta = 25°C Parameter Repetitive peak reverse voltage Av.

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Datasheet Details

Part number MA3G762
Manufacturer Panasonic
File Size 40.19 KB
Description Silicon epitaxial planar type (cathode common)
Datasheet download datasheet MA3G762 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA3G762 Silicon epitaxial planar type (cathode common) Unit : mm 0.7 ± 0.1 For switching power supply I Features • Forward current (average) IF(AV): 20 A type • Repetitive peak reverse voltage VRRM: 90 V type • High reliability caused by sealed in the TOP-3F (Full-pack package) • Cathode common dual type 15.0 ± 0.5 7.2 ± 0.3 5.0 ± 0.2 3.2 ± 0.2 21.0 ± 0.5 15.0 ± 0.2 φ 3.2 ± 0.1 3.5 ± 12.7 ± 0.3 0.3 Solder Dip 2.0 ± 0.1 16.2 ± 0.5 2.0 ± 0.1 0.6 − 0.1 + 0.2 1.1 ± 0.1 5.45 ± 0.
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