1
MA3J700
IF V F
103 25°C Ta = 100°C
0.8 0.7
Schottky Barrier Diodes (SBD)
VF Ta
104
IR VR
102
Ta = 100°C
Forward current IF (mA)
Forward voltage VF (V)
0.6 0.5 0.4 0.3 100 mA 0.2 0.1 10 mA.
20°C 10
IF = 500 mA
Reverse current IR (µA)
103
102
25°C
1
10.
1
10
10.
2
0
0.1
0.2
0.3
0.4
0.5
0.6
0.
40
1
0 40 80 120 160 200
0
10
20
30
40
50
60
Forward voltage VF (V)
Ambient temperature Ta (°C)
Reverse voltage VR (V)
IR T a
10.
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Schottky Barrier Diodes (SBD)
MA3J700
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
2.1 ± 0.1 0.425 1.25 ± 0.1 0.425
+ 0.1
• S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 500 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr)
2.0 ± 0.2 1.3 ± 0.1 0.65 0.65
1 3 2
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature
Symbol VR VRRM IF(AV) IFSM Tj Tstg
Rating 40 40 500 2 125 −55 to +150
Unit V V mA A °C °C
0.9 ± 0.
MA3J700 Datasheet
