MA3J700 Datasheet PDF (Silicon epitaxial planar type)

MA3J700 - Silicon epitaxial planar type

Features

1 MA3J700 IF  V F 103 25°C Ta = 100°C 0.8 0.7 Schottky Barrier Diodes (SBD) VF  Ta 104 IR  VR 102 Ta = 100°C Forward current IF (mA) Forward voltage VF (V) 0.6 0.5 0.4 0.3 100 mA 0.2 0.1 10 mA.
20°C 10 IF = 500 mA Reverse current IR (µA) 103 102 25°C 1 10.
1 10 10.
2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.
40 1 0 40 80 120 160 200 0 10 20 30 40 50 60 Forward voltage VF (V) Ambient temperature Ta (°C) Reverse voltage VR (V) IR  T a 10.

Datasheet Details

Part number	MA3J700
Manufacturer	Panasonic
File Size	46.44 KB
Description	Silicon epitaxial planar type
Datasheet	MA3J700 Datasheet
Additional preview pages of the MA3J700 datasheet.

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Full PDF Text Transcription

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Schottky Barrier Diodes (SBD) MA3J700 Silicon epitaxial planar type Unit : mm For high-frequency rectification 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 + 0.1 • S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 500 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 1 3 2 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 40 40 500 2 125 −55 to +150 Unit V V mA A °C °C 0.9 ± 0.

Published: Apr 27, 2005 |