Datasheet Summary
Schottky Barrier Diodes (SBD)
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
2.1 ± 0.1 0.425 1.25 ± 0.1 0.425
+ 0.1
- S-mini type 3-pin package
- Allowing to rectify under (IF(AV) = 500 mA) condition
- Optimum for high-frequency rectification because of its short reverse recovery time (trr)
2.0 ± 0.2 1.3 ± 0.1 0.65 0.65
1 3 2
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current- Junction temperature Storage temperature
Symbol VR VRRM IF(AV) IFSM Tj Tstg
Rating 40 40 500 2 125
- 55 to +150
Unit V V mA A °C °C
0.9 ± 0.1
1 : Anode 2 : NC 3 : Cathode Flat S-Mini Type Package...