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Schottky Barrier Diodes (SBD)
MA3X703
Silicon epitaxial planar type
For high-frequency rectification I Features
• Mini type 3-pin package •Allowing to rectify under (IF(AV) = 500 mA) condition • Low IR(reverse current) type. (About 1/10 of IR of the ordinary products)
2.8 − 0.3 0.65 ± 0.15 1.5
+ 0.2
Unit : mm
0.65 ± 0.15
+ 0.25 − 0.05
0.95
1.9 ± 0.2
2.9 − 0.05
1 3 2
+ 0.2
0.95
1.45 0 to 0.1
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature
Symbol VR VRRM IF(AV) IFSM Tj Tstg
Rating 20 20 500 3 125 −55 to +125
Unit V V mA A °C °C
0.1 to 0.3 0.4 ± 0.2
0.8
I Absolute Maximum Ratings Ta = 25°C
1.1 − 0.
MA3X703 Datasheet
