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MA3X704E - Silicon epitaxial planar type

Key Features

  • Two MA3X704As are contained in one package.
  • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η).
  • Small tmperature coefficient of forward characteristic.
  • Extremely low reverse current IR 2.9.
  • 0.05 + 0.2 2.8.
  • 0.3 0.65 ± 0.15 1.5 + 0.2 Unit : mm 0.65 ± 0.15 + 0.25.
  • 0.05 0.95 1.9 ± 0.2 1 3 2 0.95 1.45 Parameter Reverse voltage (DC) Peak forward current Forward current (DC) MA3X704D/E Single Double.

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Datasheet Details

Part number MA3X704E
Manufacturer Panasonic
File Size 47.13 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3X704E Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA3X704D, MA3X704E Silicon epitaxial planar type For switching circuits For wave detection circuit I Features • Two MA3X704As are contained in one package • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Small tmperature coefficient of forward characteristic • Extremely low reverse current IR 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.2 Unit : mm 0.65 ± 0.15 + 0.25 − 0.05 0.95 1.9 ± 0.2 1 3 2 0.95 1.