Datasheet4U Logo Datasheet4U.com

MA3X704A - Silicon epitaxial planar type

Key Features

  • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η).
  • Small temperature coefficient of forward characteristic.
  • Extremely low reverse current IR 1.9 ± 0.2 + 0.2 1 3 2 1.45 0 to 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage MA3X704 MA3X704A MA3X704 MA3X704A IFM IF Tj Tstg VRM Symbol VR Rating 15 30 15 30 150 30 125.
  • 55 to +125 mA mA °C °C V Unit V 0.1 to 0.3 0.4 ± 0.2 1.1 0.8 1 : Ano.

📥 Download Datasheet

Datasheet Details

Part number MA3X704A
Manufacturer Panasonic
File Size 49.30 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3X704A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Schottky Barrier Diodes (SBD) MA3X704, MA3X704A Silicon epitaxial planar type For switching circuits For wave detection circuit 2.9 − 0.05 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.2 Unit : mm 0.65 ± 0.15 + 0.25 − 0.05 0.95 0.95 I Features • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Small temperature coefficient of forward characteristic • Extremely low reverse current IR 1.9 ± 0.2 + 0.2 1 3 2 1.45 0 to 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage MA3X704 MA3X704A MA3X704 MA3X704A IFM IF Tj Tstg VRM Symbol VR Rating 15 30 15 30 150 30 125 −55 to +125 mA mA °C °C V Unit V 0.1 to 0.3 0.4 ± 0.2 1.1 0.