MA3X721E - Silicon epitaxial planar type

Panasonic

Key Features

0.95 1 3 2 0.95 1.45 1.1.
0.1 + 0.2 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Single Double.
1 Single Double.
1 Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 30 30 300 220 200 130 1 0.7 150.
55 to +150 Unit V V mA mA JEDEC : TO-236 EIAJ : SC-59 Mini Type Package (3-pin) MA3X721D MA3X721E 1 Cathode Anode 2 Cathode Anode 3 Anode Cathode Single Non-repetitive peak forward surge current.
2 Doubl.

MA3X721E silicon epitaxial planar type by Panasonic - Datasheet Preview

Datasheet Details

Part number	MA3X721E
Manufacturer	Panasonic
File Size	47.02 KB
Description	Silicon epitaxial planar type
Datasheet	MA3X721E Datasheet

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Schottky Barrier Diodes (SBD) MA3X721D, MA3X721E Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification • Two MA3X721s are contained in one package • Allowing to rectify under (IF(AV) = 200 mA) condition (for the single diode) 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.25 − 0.05 + 0.2 0.65 ± 0.15 1.9 ± 0.2 I Features 0.95 1 3 2 0.95 1.45 1.1 − 0.1 + 0.2 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Single Double*1 Single Double*1 Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 30 30 300 220 200 130 1 0.