0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive.
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Schottky Barrier Diodes (SBD)
MA3X727
Silicon epitaxial planar type
Unit : mm
For super-high speed switching circuit For small current rectification I Features
• Sealed in the Mini type mold. High breakdown voltage type (VR = 50 V) • Allowing to rectify under (IF(AV) = 200 mA) condition • High reliability
2.9 − 0.05
+ 0.2
2.8 − 0.3 0.65 ± 0.15
+ 0.2
1.5 − 0.05
+ 0.25
0.65 ± 0.15
0.95
1.9 ± 0.2
1 3 2
0.95
1.45 0 to 0.1
1.1 − 0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 50 50 300 200 1 150 −55 to +150 Unit V V mA mA A °C °C
0.1 to 0.3 0.4 ± 0.
MA3X727 Datasheet
