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MA3X730 - Silicon epitaxial planar type

Key Features

  • 1 3 2 + 0.2 0.95 1.45 0 to 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Forward voltage (DC) Reverse voltage (DC) Junction temperature Storage temperature Symbol VF VR Tj Tstg Rating 0.5 5 125.
  • 55 to +125 Unit V V °C °C 1.1.
  • 0.1 0.1 to 0.3 0.4 ± 0.2 Marking Symbol: M2X Internal Connection 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Forward current (DC) Reverse current (DC) Forward voltage (DC) Reverse breakdown voltage (DC) Terminal capacitance Conversi.

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Datasheet Details

Part number MA3X730
Manufacturer Panasonic
File Size 40.88 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3X730 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA3X730 Silicon epitaxial planar type Unit : mm For UHF mixer 0.65 ± 0.15 2.8 − 0.3 1.5 − 0.05 + 0.25 + 0.2 0.65 ± 0.15 0.95 • Two MA2X707s are contained in the (Mini (3-pin) type) • Large conversion gain (GC) • Small forward voltage VF • Optimum for the UHF band mixer 1.9 ± 0.2 2.9 − 0.05 I Features 1 3 2 + 0.2 0.95 1.45 0 to 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Forward voltage (DC) Reverse voltage (DC) Junction temperature Storage temperature Symbol VF VR Tj Tstg Rating 0.5 5 125 −55 to +125 Unit V V °C °C 1.1 − 0.1 0.1 to 0.3 0.4 ± 0.