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MA3X791 - Silicon epitaxial planar type

Key Features

  • Two MA3X786s are contained in one package (series connection).
  • Allowing to rectify under (IF(AV) = 100 mA) condition.
  • Optimum for high-frequency rectification because of its short reverse recovery time (trr).
  • Low VF (forward rise voltage), with high rectification efficiency 2.9.
  • 0.05 + 0.2 2.8.
  • 0.3 0.65 ± 0.15 + 0.2 Unit : mm 0.65 ± 0.15 1.5.
  • 0.05 + 0.25 0.95 1.9 ± 0.2 1 3 2 0.95 1.45 0 to 0.1 1.1.
  • 0.1 I Absolut.

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Datasheet Details

Part number MA3X791
Manufacturer Panasonic
File Size 48.25 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3X791 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA3X791 Silicon epitaxial planar type For super-high speed switching circuit For small current rectification I Features • Two MA3X786s are contained in one package (series connection) • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ± 0.15 + 0.2 Unit : mm 0.65 ± 0.15 1.5 − 0.05 + 0.25 0.95 1.9 ± 0.2 1 3 2 0.95 1.45 0 to 0.1 1.1 − 0.